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FDT1600N10ALZ Datasheet

FDT1600N10ALZ Cover
DatasheetFDT1600N10ALZ
File Size853.73 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDT1600N10ALZ
Description MOSFET N-CH 100V SOT-223-4

FDT1600N10ALZ - ON Semiconductor

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URL Link

FDT1600N10ALZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

5.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

160mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

3.77nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

225pF @ 50V

FET Feature

-

Power Dissipation (Max)

10.42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA