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FDT86102LZ Datasheet

FDT86102LZ Cover
DatasheetFDT86102LZ
File Size361.61 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDT86102LZ
Description MOSFET N-CH 100V 6.6A SOT-223

FDT86102LZ - ON Semiconductor

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FDT86102LZ FDT86102LZ ON Semiconductor MOSFET N-CH 100V 6.6A SOT-223 5085

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URL Link

FDT86102LZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

28mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1490pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA