Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FDU7N60NZTU |
| File Size | 773.49 KB |
| Total Pages | 11 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FDU7N60NZTU, FDD7N60NZTM |
| Description | MOSFET N-CH 600V SGL IPAK, MOSFET N-CH 600V 5.5A DPAK-3 |
FDU7N60NZTU - ON Semiconductor
The Products You May Be Interested In
 |
FDU7N60NZTU | ON Semiconductor | MOSFET N-CH 600V SGL IPAK | 262 More on Order |
 |
FDD7N60NZTM | ON Semiconductor | MOSFET N-CH 600V 5.5A DPAK-3 | 280 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series UniFET-II™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.25Ohm @ 2.75A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 730pF @ 25V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series UniFET-II™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.25Ohm @ 2.75A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 730pF @ 25V FET Feature - Power Dissipation (Max) 90W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |