Datasheet | FDWS9508L_F085 |
File Size | 634.23 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | FDWS9508L_F085, FDWS9508L-F085 |
Description | MOSFET P-CH PWR TRENCH PT8-40V, PMOS PWR56 40V 4.9 MOHM |
FDWS9508L_F085 - ON Semiconductor
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FDWS9508L_F085 | ON Semiconductor | MOSFET P-CH PWR TRENCH PT8-40V | 151 More on Order |
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FDWS9508L-F085 | ON Semiconductor | PMOS PWR56 40V 4.9 MOHM | 407 More on Order |
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ON Semiconductor Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 4840pF @ 20V FET Feature - Power Dissipation (Max) 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerTDFN |
ON Semiconductor Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 4840pF @ 20V FET Feature - Power Dissipation (Max) 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (5x6) Package / Case 8-PowerTDFN |