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| Datasheet | FESE8JT-E3/45 |
| File Size | 86.21 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FESE8JT-E3/45, FESE8HT-E3/45 |
| Description | DIODE GEN PURP 600V 8A TO220AC, DIODE GEN PURP 500V 8A TO220AC |
FESE8JT-E3/45 - Vishay Semiconductor Diodes Division
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.5V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 50pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 500V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 1.5V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 10µA @ 500V Capacitance @ Vr, F 50pF @ 4V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -55°C ~ 150°C |