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FF11MR12W1M1B11BOMA1 Datasheet

FF11MR12W1M1B11BOMA1 Cover
DatasheetFF11MR12W1M1B11BOMA1
File Size476.59 KB
Total Pages7
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts FF11MR12W1M1B11BOMA1
Description MOSFET 2 N-CH 1200V 100A MODULE

FF11MR12W1M1B11BOMA1 - Infineon Technologies

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FF11MR12W1M1B11BOMA1 FF11MR12W1M1B11BOMA1 Infineon Technologies MOSFET 2 N-CH 1200V 100A MODULE 462

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URL Link

FF11MR12W1M1B11BOMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolSiC™+

FET Type

2 N-Channel (Dual)

FET Feature

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss)

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C

100A

Rds On (Max) @ Id, Vgs

11mOhm @ 100A, 15V

Vgs(th) (Max) @ Id

5.55V @ 40mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds

7950pF @ 800V

Power - Max

-

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

Module

Supplier Device Package

Module