Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FGA25N120ANTDTU-F109 |
| File Size | 1,382.87 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FGA25N120ANTDTU-F109, FGA25N120ANTDTU |
| Description | IGBT 1200V 50A 312W TO3P, IGBT 1200V 50A 312W TO3P |
FGA25N120ANTDTU-F109 - ON Semiconductor
The Products You May Be Interested In
 |
FGA25N120ANTDTU-F109 | ON Semiconductor | IGBT 1200V 50A 312W TO3P | 550 More on Order |
 |
FGA25N120ANTDTU | ON Semiconductor | IGBT 1200V 50A 312W TO3P | 1743 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W Switching Energy 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 50ns/190ns Test Condition 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr) 350ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |
Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 2.65V @ 15V, 50A Power - Max 312W Switching Energy 4.1mJ (on), 960µJ (off) Input Type Standard Gate Charge 200nC Td (on/off) @ 25°C 50ns/190ns Test Condition 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr) 350ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |