Datasheet | FGA50N100BNTD2 |
File Size | 455.63 KB |
Total Pages | 11 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FGA50N100BNTD2 |
Description | IGBT 1000V 50A 156W TO3P |
FGA50N100BNTD2 - ON Semiconductor
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FGA50N100BNTD2 | ON Semiconductor | IGBT 1000V 50A 156W TO3P | 299 More on Order |
URL Link
www.oemstron.com/datasheet/FGA50N100BNTD2
ON Semiconductor Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1000V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A Power - Max 156W Switching Energy - Input Type Standard Gate Charge 257nC Td (on/off) @ 25°C 34ns/243ns Test Condition 600V, 60A, 10Ohm, 15V Reverse Recovery Time (trr) 75ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3P |