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| Datasheet | FGA70N30TDTU |
| File Size | 763.76 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FGA70N30TDTU |
| Description | IGBT 300V 201W TO3P |
FGA70N30TDTU - ON Semiconductor
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FGA70N30TDTU | ON Semiconductor | IGBT 300V 201W TO3P | 236 More on Order |
URL Link
www.oemstron.com/datasheet/FGA70N30TDTU
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Manufacturer ON Semiconductor Series - IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 300V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 160A Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 20A Power - Max 201W Switching Energy - Input Type Standard Gate Charge 125nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 21ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-3P-3, SC-65-3 Supplier Device Package TO-3PN |