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FGB30N6S2DT Datasheet

FGB30N6S2DT Cover
DatasheetFGB30N6S2DT
File Size281.66 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts FGB30N6S2DT, FGP30N6S2D, FGH30N6S2, FGH30N6S2D, FGB30N6S2D
Description IGBT 600V 45A 167W TO263AB, IGBT 600V 45A 167W TO220AB, IGBT 600V 45A 167W TO247, IGBT 600V 45A 167W TO247, IGBT 600V 45A 167W TO263AB

FGB30N6S2DT - ON Semiconductor

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URL Link

FGB30N6S2DT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

FGP30N6S2D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

FGH30N6S2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

FGH30N6S2D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

FGB30N6S2D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

108A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 100µJ (off)

Input Type

Standard

Gate Charge

23nC

Td (on/off) @ 25°C

6ns/40ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

46ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB