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Datasheet | FJN3311RBU |
File Size | 26.45 KB |
Total Pages | 3 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | FJN3311RBU, FJN3311RTA |
Description | TRANS PREBIAS NPN 300MW TO92-3, TRANS PREBIAS NPN 300MW TO92-3 |
FJN3311RBU - ON Semiconductor
![FJN3311RBU Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fjn3311rbu-0001.jpg)
![FJN3311RBU Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/fjn3311rbu-0002.jpg)
![FJN3311RBU Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/fjn3311rbu-0003.jpg)
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FJN3311RBU | ON Semiconductor | TRANS PREBIAS NPN 300MW TO92-3 | 245 More on Order |
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FJN3311RTA | ON Semiconductor | TRANS PREBIAS NPN 300MW TO92-3 | 427 More on Order |
URL Link
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 40V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 40V Resistor - Base (R1) 22 kOhms Resistor - Emitter Base (R2) - DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |