Semiconductors
Passive Components
Sensors
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Optoelectronics
| Datasheet | FJN3315RTA |
| File Size | 36.75 KB |
| Total Pages | 4 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FJN3315RTA, FJN3315RBU |
| Description | TRANS PREBIAS NPN 300MW TO92-3, TRANS PREBIAS NPN 300MW TO92-3 |
FJN3315RTA - ON Semiconductor
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FJN3315RTA | ON Semiconductor | TRANS PREBIAS NPN 300MW TO92-3 | 467 More on Order |
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FJN3315RBU | ON Semiconductor | TRANS PREBIAS NPN 300MW TO92-3 | 162 More on Order |
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Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 2.2 kOhms Resistor - Emitter Base (R2) 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |