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| Datasheet | FP50R07N2E4BOSA1 |
| File Size | 740.57 KB |
| Total Pages | 12 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FP50R07N2E4BOSA1 |
| Description | IGBT MODULE VCES 600V 50A |
FP50R07N2E4BOSA1 - Infineon Technologies
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FP50R07N2E4BOSA1 | Infineon Technologies | IGBT MODULE VCES 600V 50A | 442 More on Order |
URL Link
www.oemstron.com/datasheet/FP50R07N2E4BOSA1
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Manufacturer Infineon Technologies Series - IGBT Type Trench Field Stop Configuration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 70A Power - Max - Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 50A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 3.1nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |