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| Datasheet | FQA10N80_F109 |
| File Size | 803.64 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQA10N80_F109 |
| Description | MOSFET N-CH 800V 9.8A TO-3P |
FQA10N80_F109 - ON Semiconductor
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FQA10N80_F109 | ON Semiconductor | MOSFET N-CH 800V 9.8A TO-3P | 218 More on Order |
URL Link
www.oemstron.com/datasheet/FQA10N80_F109
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 9.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.05Ohm @ 4.9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V FET Feature - Power Dissipation (Max) 240W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |