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FQA10N80C Datasheet

FQA10N80C Cover
DatasheetFQA10N80C
File Size620.74 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQA10N80C
Description MOSFET N-CH 800V 10A TO-3P

FQA10N80C - ON Semiconductor

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FQA10N80C FQA10N80C ON Semiconductor MOSFET N-CH 800V 10A TO-3P 492

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URL Link

FQA10N80C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

58nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

240W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3