Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FQA6N90 |
| File Size | 726.58 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQA6N90 |
| Description | MOSFET N-CH 900V 6.4A TO-3P |
FQA6N90 - ON Semiconductor
The Products You May Be Interested In
 |
FQA6N90 | ON Semiconductor | MOSFET N-CH 900V 6.4A TO-3P | 277 More on Order |
URL Link
www.oemstron.com/datasheet/FQA6N90
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 6.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.2A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1880pF @ 25V FET Feature - Power Dissipation (Max) 198W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |