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Datasheet | FQAF12N60 |
File Size | 539.06 KB |
Total Pages | 8 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FQAF12N60 |
Description | MOSFET N-CH 600V 7.8A TO-3PF |
FQAF12N60 - ON Semiconductor
![FQAF12N60 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fqaf12n60-0001.jpg)
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![FQAF12N60 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/fqaf12n60-0004.jpg)
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![FQAF12N60 Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/fqaf12n60-0006.jpg)
![FQAF12N60 Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/fqaf12n60-0007.jpg)
![FQAF12N60 Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/fqaf12n60-0008.jpg)
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FQAF12N60 | ON Semiconductor | MOSFET N-CH 600V 7.8A TO-3PF | 130 More on Order |
URL Link
www.oemstron.com/datasheet/FQAF12N60
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 700mOhm @ 3.9A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 25V FET Feature - Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack |