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| Datasheet | FQAF19N60 |
| File Size | 525.71 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQAF19N60 |
| Description | MOSFET N-CH 600V 11.2A TO-3PF |
FQAF19N60 - ON Semiconductor
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FQAF19N60 | ON Semiconductor | MOSFET N-CH 600V 11.2A TO-3PF | 437 More on Order |
URL Link
www.oemstron.com/datasheet/FQAF19N60
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack |