Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FQB30N06TM |
| File Size | 663.35 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQB30N06TM |
| Description | MOSFET N-CH 60V 30A D2PAK |
FQB30N06TM - ON Semiconductor
The Products You May Be Interested In
 |
FQB30N06TM | ON Semiconductor | MOSFET N-CH 60V 30A D2PAK | 427 More on Order |
URL Link
www.oemstron.com/datasheet/FQB30N06TM
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 945pF @ 25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 79W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |