Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FQB9N08LTM Datasheet

FQB9N08LTM Cover
DatasheetFQB9N08LTM
File Size613.31 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQB9N08LTM
Description MOSFET N-CH 80V 9.3A D2PAK

FQB9N08LTM - ON Semiconductor

FQB9N08LTM Datasheet Page 1
FQB9N08LTM Datasheet Page 2
FQB9N08LTM Datasheet Page 3
FQB9N08LTM Datasheet Page 4
FQB9N08LTM Datasheet Page 5
FQB9N08LTM Datasheet Page 6
FQB9N08LTM Datasheet Page 7
FQB9N08LTM Datasheet Page 8
FQB9N08LTM Datasheet Page 9

The Products You May Be Interested In

FQB9N08LTM FQB9N08LTM ON Semiconductor MOSFET N-CH 80V 9.3A D2PAK 139

More on Order

URL Link

FQB9N08LTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

9.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

210mOhm @ 4.65A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.1nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.75W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB