![FQD10N20TM Cover](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0001.jpg)
Datasheet | FQD10N20TM |
File Size | 778.05 KB |
Total Pages | 9 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | FQD10N20TM, FQD10N20TF, FQU10N20TU |
Description | MOSFET N-CH 200V 7.6A DPAK, MOSFET N-CH 200V 7.6A DPAK, MOSFET N-CH 200V 7.6A IPAK |
FQD10N20TM - ON Semiconductor
![FQD10N20TM Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0001.jpg)
![FQD10N20TM Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0002.jpg)
![FQD10N20TM Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0003.jpg)
![FQD10N20TM Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0004.jpg)
![FQD10N20TM Datasheet Page 5](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0005.jpg)
![FQD10N20TM Datasheet Page 6](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0006.jpg)
![FQD10N20TM Datasheet Page 7](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0007.jpg)
![FQD10N20TM Datasheet Page 8](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0008.jpg)
![FQD10N20TM Datasheet Page 9](http://media.oemstron.com/oemstron/datasheet/sm/fqd10n20tm-0009.jpg)
The Products You May Be Interested In
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FQD10N20TF | ON Semiconductor | MOSFET N-CH 200V 7.6A DPAK | 418 More on Order |
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FQU10N20TU | ON Semiconductor | MOSFET N-CH 200V 7.6A IPAK | 182 More on Order |
URL Link
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 51W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 51W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 51W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |