Support
sales@oemstron.com
86-755-83232896
English$ USD
Contact Us
TELEPHONE86-755-83232896
E-MAILsales@oemstron.com
SKYPEcondy@oemstron.com
QQ2881672436
MessageLeave Your Message
Top

FQD13N06LTM Datasheet

FQD13N06LTM Cover
DatasheetFQD13N06LTM
File Size1,008.89 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts FQD13N06LTM, FQU13N06LTU, FQU13N06LTU-WS
Description MOSFET N-CH 60V 11A DPAK, MOSFET N-CH 60V 11A IPAK, MOSFET N-CH 60V 11A IPAK

FQD13N06LTM - ON Semiconductor

FQD13N06LTM Datasheet Page 1
FQD13N06LTM Datasheet Page 2
FQD13N06LTM Datasheet Page 3
FQD13N06LTM Datasheet Page 4
FQD13N06LTM Datasheet Page 5
FQD13N06LTM Datasheet Page 6
FQD13N06LTM Datasheet Page 7
FQD13N06LTM Datasheet Page 8
FQD13N06LTM Datasheet Page 9
FQD13N06LTM Datasheet Page 10

The Products You May Be Interested In

FQD13N06LTM FQD13N06LTM ON Semiconductor MOSFET N-CH 60V 11A DPAK 142

More on Order

FQU13N06LTU FQU13N06LTU ON Semiconductor MOSFET N-CH 60V 11A IPAK 8692

More on Order

FQU13N06LTU-WS FQU13N06LTU-WS ON Semiconductor MOSFET N-CH 60V 11A IPAK 15473

More on Order

URL Link

FQD13N06LTM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

115mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQU13N06LTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

115mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

FQU13N06LTU-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

115mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA