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| Datasheet | FQD19N10LTM |
| File Size | 1,451.25 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQD19N10LTM |
| Description | MOSFET N-CH 100V 15.6A DPAK |
FQD19N10LTM - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/FQD19N10LTM
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 15.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 100mOhm @ 7.8A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |