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| Datasheet | FQE10N20CTU |
| File Size | 628.79 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQE10N20CTU |
| Description | MOSFET N-CH 200V 4A TO-126 |
FQE10N20CTU - ON Semiconductor
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FQE10N20CTU | ON Semiconductor | MOSFET N-CH 200V 4A TO-126 | 237 More on Order |
URL Link
www.oemstron.com/datasheet/FQE10N20CTU
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V FET Feature - Power Dissipation (Max) 12.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-126-3 Package / Case TO-225AA, TO-126-3 |