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| Datasheet | FQE10N20LCTU |
| File Size | 894.76 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQE10N20LCTU |
| Description | MOSFET N-CH 200V 4A TO-126 |
FQE10N20LCTU - ON Semiconductor
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URL Link
www.oemstron.com/datasheet/FQE10N20LCTU
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 360mOhm @ 2A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V FET Feature - Power Dissipation (Max) 12.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-126-3 Package / Case TO-225AA, TO-126-3 |