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| Datasheet | FQI11P06TU |
| File Size | 1,040.71 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQI11P06TU |
| Description | MOSFET P-CH 60V 11.4A I2PAK |
FQI11P06TU - ON Semiconductor
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FQI11P06TU | ON Semiconductor | MOSFET P-CH 60V 11.4A I2PAK | 204 More on Order |
URL Link
www.oemstron.com/datasheet/FQI11P06TU
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Manufacturer ON Semiconductor Series QFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 53W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |