Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FQP32N20C_F080 |
| File Size | 815.61 KB |
| Total Pages | 12 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | FQP32N20C_F080, FQPF32N20C, FQP32N20C |
| Description | MOSFET N-CH 200V 28A TO-220, MOSFET N-CH 200V 28A TO-220F, MOSFET N-CH 200V 28A TO-220 |
FQP32N20C_F080 - ON Semiconductor
The Products You May Be Interested In
 |
FQP32N20C_F080 | ON Semiconductor | MOSFET N-CH 200V 28A TO-220 | 269 More on Order |
 |
FQPF32N20C | ON Semiconductor | MOSFET N-CH 200V 28A TO-220F | 509 More on Order |
 |
FQP32N20C | ON Semiconductor | MOSFET N-CH 200V 28A TO-220 | 38411 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 82mOhm @ 14A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature - Power Dissipation (Max) 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 82mOhm @ 14A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2220pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 28A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 82mOhm @ 14A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature - Power Dissipation (Max) 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |