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FQP8N60C Datasheet

FQP8N60C Cover
DatasheetFQP8N60C
File Size1,496.53 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQP8N60C
Description MOSFET N-CH 600V 7.5A TO-220

FQP8N60C - ON Semiconductor

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FQP8N60C FQP8N60C ON Semiconductor MOSFET N-CH 600V 7.5A TO-220 1817

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URL Link

FQP8N60C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 3.75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1255pF @ 25V

FET Feature

-

Power Dissipation (Max)

147W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3