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| Datasheet | FQT1N80TF-WS |
| File Size | 1,215.48 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQT1N80TF-WS |
| Description | MOSFET N-CH 800V 0.2A SOT-223 |
FQT1N80TF-WS - ON Semiconductor
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FQT1N80TF-WS | ON Semiconductor | MOSFET N-CH 800V 0.2A SOT-223 | 495 More on Order |
URL Link
www.oemstron.com/datasheet/FQT1N80TF-WS
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-3 Package / Case TO-261-3 |