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| Datasheet | FQT3P20TF-SB82100 |
| File Size | 870.67 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FQT3P20TF-SB82100, FQT3P20TF |
| Description | MOSFET P-CH 200V 0.67A SOT-223-4, MOSFET P-CH 200V 0.67A SOT-223 |
FQT3P20TF-SB82100 - ON Semiconductor
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Manufacturer ON Semiconductor Series QFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 670mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7Ohm @ 335mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-4 Package / Case TO-261-4, TO-261AA |
Manufacturer ON Semiconductor Series QFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 670mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7Ohm @ 335mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223-4 Package / Case TO-261-4, TO-261AA |