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FQT7N10TF Datasheet

FQT7N10TF Cover
DatasheetFQT7N10TF
File Size780.2 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQT7N10TF
Description MOSFET N-CH 100V 1.7A SOT-223

FQT7N10TF - ON Semiconductor

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FQT7N10TF FQT7N10TF ON Semiconductor MOSFET N-CH 100V 1.7A SOT-223 228

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URL Link

FQT7N10TF

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

350mOhm @ 850mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-4

Package / Case

TO-261-4, TO-261AA