Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FQU2N50BTU-WS |
| File Size | 765.22 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQU2N50BTU-WS |
| Description | MOSFET N-CH 500V 1.6A IPAK |
FQU2N50BTU-WS - ON Semiconductor
The Products You May Be Interested In
 |
FQU2N50BTU-WS | ON Semiconductor | MOSFET N-CH 500V 1.6A IPAK | 277 More on Order |
URL Link
www.oemstron.com/datasheet/FQU2N50BTU-WS
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.3Ohm @ 800mA, 10V Vgs(th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 30W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |