Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FQU7N10LTU |
| File Size | 551.59 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQU7N10LTU |
| Description | MOSFET N-CH 100V 5.8A IPAK |
FQU7N10LTU - ON Semiconductor
The Products You May Be Interested In
 |
FQU7N10LTU | ON Semiconductor | MOSFET N-CH 100V 5.8A IPAK | 404 More on Order |
URL Link
www.oemstron.com/datasheet/FQU7N10LTU
|
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 350mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 290pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |