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| Datasheet | FS150R17N3E4B11BOSA1 |
| File Size | 690.1 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FS150R17N3E4B11BOSA1 |
| Description | IGBT MODULE VCES 650V 150A |
FS150R17N3E4B11BOSA1 - Infineon Technologies
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FS150R17N3E4B11BOSA1 | Infineon Technologies | IGBT MODULE VCES 650V 150A | 215 More on Order |
URL Link
www.oemstron.com/datasheet/FS150R17N3E4B11BOSA1
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Manufacturer Infineon Technologies Series - IGBT Type Trench Field Stop Configuration Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) 1700V Current - Collector (Ic) (Max) 150A Power - Max 835W Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 150A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 13.5nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |