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| Datasheet | GA04JT17-247 |
| File Size | 1,359.94 KB |
| Total Pages | 12 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GA04JT17-247 |
| Description | TRANS SJT 1700V 4A TO-247AB |
GA04JT17-247 - GeneSiC Semiconductor
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GA04JT17-247 | GeneSiC Semiconductor | TRANS SJT 1700V 4A TO-247AB | 454 More on Order |
URL Link
www.oemstron.com/datasheet/GA04JT17-247
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 4A (Tc) (95°C) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 480mOhm @ 4A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 106W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AB Package / Case TO-247-3 |