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| Datasheet | GA100JT17-227 |
| File Size | 1,386.93 KB |
| Total Pages | 12 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GA100JT17-227 |
| Description | TRANS SJT 1700V 160A SOT227 |
GA100JT17-227 - GeneSiC Semiconductor
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GA100JT17-227 | GeneSiC Semiconductor | TRANS SJT 1700V 160A SOT227 | 483 More on Order |
URL Link
www.oemstron.com/datasheet/GA100JT17-227
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 10mOhm @ 100A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 800V FET Feature - Power Dissipation (Max) 535W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227 Package / Case SOT-227-4, miniBLOC |