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| Datasheet | GA35XCP12-247 |
| File Size | 408.05 KB |
| Total Pages | 5 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GA35XCP12-247 |
| Description | IGBT 1200V SOT247 |
GA35XCP12-247 - GeneSiC Semiconductor
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GA35XCP12-247 | GeneSiC Semiconductor | IGBT 1200V SOT247 | 368 More on Order |
URL Link
www.oemstron.com/datasheet/GA35XCP12-247
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Manufacturer GeneSiC Semiconductor Series - IGBT Type PT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 35A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 35A Power - Max - Switching Energy 2.66mJ (on), 4.35mJ (off) Input Type Standard Gate Charge 50nC Td (on/off) @ 25°C - Test Condition 800V, 35A, 22Ohm, 15V Reverse Recovery Time (trr) 36ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AB |