Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | GDP50P120B |
| File Size | 519.42 KB |
| Total Pages | 3 |
| Manufacturer | Global Power Technologies Group |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GDP50P120B |
| Description | DIODE SCHOTTKY 1.2KV 50A TO247-2 |
GDP50P120B - Global Power Technologies Group
The Products You May Be Interested In
 |
GDP50P120B | Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 50A TO247-2 | 397 More on Order |
URL Link
www.oemstron.com/datasheet/GDP50P120B
|
Manufacturer Global Power Technologies Group Series Amp+™ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 50A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 1200V Capacitance @ Vr, F 2984pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-247-2 Supplier Device Package TO-247-2 Operating Temperature - Junction -55°C ~ 135°C |