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| Datasheet | GP1M008A050CG |
| File Size | 520.09 KB |
| Total Pages | 6 |
| Manufacturer | Global Power Technologies Group |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | GP1M008A050CG, GP1M008A050PG |
| Description | MOSFET N-CH 500V 8A DPAK, MOSFET N-CH 500V 8A IPAK |
GP1M008A050CG - Global Power Technologies Group
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Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 937pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 937pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |