Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | GP2M004A060PG |
| File Size | 531.88 KB |
| Total Pages | 6 |
| Manufacturer | Global Power Technologies Group |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | GP2M004A060PG, GP2M004A060CG |
| Description | MOSFET N-CH 600V 4A IPAK, MOSFET N-CH 600V 4A DPAK |
GP2M004A060PG - Global Power Technologies Group
The Products You May Be Interested In
 |
GP2M004A060PG | Global Power Technologies Group | MOSFET N-CH 600V 4A IPAK | 448 More on Order |
 |
GP2M004A060CG | Global Power Technologies Group | MOSFET N-CH 600V 4A DPAK | 477 More on Order |
URL Link
|
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 545pF @ 25V FET Feature - Power Dissipation (Max) 86.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 545pF @ 25V FET Feature - Power Dissipation (Max) 86.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |