Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | GP2M013A050F |
| File Size | 242.04 KB |
| Total Pages | 5 |
| Manufacturer | Global Power Technologies Group |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GP2M013A050F |
| Description | MOSFET N-CH 500V 13A TO220F |
GP2M013A050F - Global Power Technologies Group
The Products You May Be Interested In
 |
GP2M013A050F | Global Power Technologies Group | MOSFET N-CH 500V 13A TO220F | 239 More on Order |
URL Link
www.oemstron.com/datasheet/GP2M013A050F
|
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1798pF @ 25V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |