![GPP100MS-E3/54 Cover](http://media.oemstron.com/oemstron/datasheet/sm/gpp100ms-e3-54-0001.jpg)
Datasheet | GPP100MS-E3/54 |
File Size | 82.19 KB |
Total Pages | 4 |
Manufacturer | Vishay Semiconductor Diodes Division |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | GPP100MS-E3/54 |
Description | DIODE GEN PURP 1KV 10A P600 |
GPP100MS-E3/54 - Vishay Semiconductor Diodes Division
![GPP100MS-E3/54 Datasheet Page 1](http://media.oemstron.com/oemstron/datasheet/sm/gpp100ms-e3-54-0001.jpg)
![GPP100MS-E3/54 Datasheet Page 2](http://media.oemstron.com/oemstron/datasheet/sm/gpp100ms-e3-54-0002.jpg)
![GPP100MS-E3/54 Datasheet Page 3](http://media.oemstron.com/oemstron/datasheet/sm/gpp100ms-e3-54-0003.jpg)
![GPP100MS-E3/54 Datasheet Page 4](http://media.oemstron.com/oemstron/datasheet/sm/gpp100ms-e3-54-0004.jpg)
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GPP100MS-E3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 10A P600 | 325 More on Order |
URL Link
www.oemstron.com/datasheet/GPP100MS-E3/54
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 1.05V @ 10A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 5.5µs Current - Reverse Leakage @ Vr 5µA @ 1000V Capacitance @ Vr, F 110pF @ 4V, 1MHz Mounting Type Through Hole Package / Case P600, Axial Supplier Device Package P600 Operating Temperature - Junction -55°C ~ 175°C |