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GSID200A170S3B1 Datasheet

GSID200A170S3B1 Cover
DatasheetGSID200A170S3B1
File Size359 KB
Total Pages8
ManufacturerGlobal Power Technologies Group
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GSID200A170S3B1
Description SILICON IGBT MODULES

GSID200A170S3B1 - Global Power Technologies Group

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GSID200A170S3B1 GSID200A170S3B1 Global Power Technologies Group SILICON IGBT MODULES 115

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URL Link

GSID200A170S3B1

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

Amp+™

IGBT Type

-

Configuration

2 Independent

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

400A

Power - Max

1630W

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 200A

Current - Collector Cutoff (Max)

1mA

Input Capacitance (Cies) @ Vce

26nF @ 25V

Input

Standard

NTC Thermistor

No

Operating Temperature

-40°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

D-3 Module

Supplier Device Package

D3