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| Datasheet | GSID600A120S4B1 |
| File Size | 335.82 KB |
| Total Pages | 9 |
| Manufacturer | Global Power Technologies Group |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GSID600A120S4B1 |
| Description | SILICON IGBT MODULES |
GSID600A120S4B1 - Global Power Technologies Group
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GSID600A120S4B1 | Global Power Technologies Group | SILICON IGBT MODULES | 191 More on Order |
URL Link
www.oemstron.com/datasheet/GSID600A120S4B1
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Manufacturer Global Power Technologies Group Series Amp+™ IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 1130A Power - Max 3060W Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A Current - Collector Cutoff (Max) 1mA Input Capacitance (Cies) @ Vce 51nF @ 25V Input Standard NTC Thermistor Yes Operating Temperature -40°C ~ 150°C Mounting Type Chassis Mount Package / Case Module Supplier Device Package Module |