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| Datasheet | GT10G131(TE12L,Q) |
| File Size | 226.99 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GT10G131(TE12L,Q) |
| Description | IGBT 400V 1W 8-SOIC |
GT10G131(TE12L,Q) - Toshiba Semiconductor and Storage
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URL Link
www.oemstron.com/datasheet/GT10G131(TE12L,Q)
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Manufacturer Toshiba Semiconductor and Storage Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 400V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.3V @ 4V, 200A Power - Max 1W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C 3.1µs/2µs Test Condition - Reverse Recovery Time (trr) - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.173", 4.40mm Width) Supplier Device Package 8-SOP (5.5x6.0) |