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| Datasheet | GT10J312(Q) |
| File Size | 509.49 KB |
| Total Pages | 7 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Website | http://www.toshiba.com/taec/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GT10J312(Q) |
| Description | IGBT 600V 10A 60W TO220SM |
GT10J312(Q) - Toshiba Semiconductor and Storage
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URL Link
www.oemstron.com/datasheet/GT10J312(Q)
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Manufacturer Toshiba Semiconductor and Storage Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 10A Current - Collector Pulsed (Icm) 20A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 60W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C 400ns/400ns Test Condition 300V, 10A, 100Ohm, 15V Reverse Recovery Time (trr) 200ns Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-220SM |