Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | HGT1S20N60A4S9A |
| File Size | 904.08 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGT1S20N60A4S9A |
| Description | IGBT 600V 70A 290W TO263AB |
HGT1S20N60A4S9A - ON Semiconductor
The Products You May Be Interested In
 |
HGT1S20N60A4S9A | ON Semiconductor | IGBT 600V 70A 290W TO263AB | 228 More on Order |
URL Link
www.oemstron.com/datasheet/HGT1S20N60A4S9A
|
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) 280A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Power - Max 290W Switching Energy 105µJ (on), 150µJ (off) Input Type Standard Gate Charge 142nC Td (on/off) @ 25°C 15ns/73ns Test Condition 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |