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HGT1S20N60C3S9A Datasheet

HGT1S20N60C3S9A Cover
DatasheetHGT1S20N60C3S9A
File Size262.6 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts HGT1S20N60C3S9A
Description IGBT 600V 45A 164W TO263AB

HGT1S20N60C3S9A - ON Semiconductor

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URL Link

HGT1S20N60C3S9A

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

45A

Current - Collector Pulsed (Icm)

300A

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 20A

Power - Max

164W

Switching Energy

295µJ (on), 500µJ (off)

Input Type

Standard

Gate Charge

91nC

Td (on/off) @ 25°C

28ns/151ns

Test Condition

480V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB