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| Datasheet | HGTD1N120BNS9A |
| File Size | 217.31 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGTD1N120BNS9A |
| Description | IGBT 1200V 5.3A 60W TO252AA |
HGTD1N120BNS9A - ON Semiconductor
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HGTD1N120BNS9A | ON Semiconductor | IGBT 1200V 5.3A 60W TO252AA | 7933 More on Order |
URL Link
www.oemstron.com/datasheet/HGTD1N120BNS9A
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 5.3A Current - Collector Pulsed (Icm) 6A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A Power - Max 60W Switching Energy 70µJ (on), 90µJ (off) Input Type Standard Gate Charge 14nC Td (on/off) @ 25°C 15ns/67ns Test Condition 960V, 1A, 82Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252AA |