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| Datasheet | HGTD3N60C3S9A |
| File Size | 263.04 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | HGTD3N60C3S9A |
| Description | IGBT 600V 6A 33W TO252AA |
HGTD3N60C3S9A - ON Semiconductor
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HGTD3N60C3S9A | ON Semiconductor | IGBT 600V 6A 33W TO252AA | 294 More on Order |
URL Link
www.oemstron.com/datasheet/HGTD3N60C3S9A
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 6A Current - Collector Pulsed (Icm) 24A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 3A Power - Max 33W Switching Energy 85µJ (on), 245µJ (off) Input Type Standard Gate Charge 10.8nC Td (on/off) @ 25°C - Test Condition 480V, 3A, 82Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252AA |